Want to ensure ultra-pure semiconductors with precise silica control?
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Chemical Mechanical Planarization

Silica particles are the main abrasive component in CMP slurries. Precise monitoring of silica concentration and particle size distribution is essential to ensure uniform polishing, prevent surface defects such as scratches or unevenness, and maintain overall process consistency.

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Etching Processes

Silica contamination can cause surface roughness, irregular etching profiles, and defects during etching steps. Monitoring silica levels helps maintain etch uniformity and device quality by preventing unwanted particulate deposition.

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Epitaxial Growth

Silica particles may act as nucleation sites for defects during the growth of thin epitaxial layers. Controlling silica contamination is important to ensure high-quality epitaxial films, which are critical for device performance.

No single measurement captures the full picture of ultrapure water quality. Resistivity works alongside several other on-line parameters to ensure process integrity.

Select a parameter to explore:

Анализатор двуокиси кремния 2850Si
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