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Chemical Mechanical Planarization (CMP)

Controlling DO helps manage oxidation and corrosion on wafer surfaces. Precise DO control ensures uniform polishing, reduces defects, and enhances the effectiveness of the planarization process.

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Epitaxy

The growth of thin crystalline layers on wafers is highly sensitive to DO levels. Maintaining ultra-low DO supports consistent layer growth and optimal electrical properties, directly impacting device performance.

No single measurement captures the full picture of ultrapure water quality. Resistivity works alongside several other on-line parameters to ensure process integrity.

Select a parameter to explore:

Датчики растворенного кислорода
Датчики удельного сопротивления
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