TDL (Tunable Diode Laser) Gas Analyzers - Overview - METTLER TOLEDO

    TDL (Tunable Diode Laser) Gas Analyzers

    Rethinking gas analytics

     

    Our leading-edge tunable diode laser GPro 500 gas analyzers measure where it matters – directly in your process.

    With the addition of one of our unique process adaptions, it is now possible to use a TDL analyzer in applications previously considered impossible for an in situ TDL.

     

    GPro 500 TDL Series

    Interference-free, drift-free TDL technology offers better process control and lower maintenance costs.
    However, for reliable measurement with a TDL sometimes necessary framework conditions such as minimum optical path length, the availability of a purge gas supply and/or maximum dust load get in the way. Acknowledging these constraints, METTLER TOLEDO has developed specific process interface solutions that substantially increase the coverage of possible TDL applications. Based on the folded optical path principle, METTLER TOLEDO’s range of compact TDL spectrometers and unique process adaptions, for process, safety, combustion, and vapor recovery applications are essential instruments for improving your processes:

    • Versatility in monitoring your process
    • Simplicity to ease field operations
    • Performance that gives you a leading edge

     

     

     
    Products and Specs
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    Short description
    Effective path length
    Exceptional ease of use and almost zero maintenance
    Probes: 100, 200, 400 mm (3.94", 7.87", 15.75")
    Wafer Cell: 50, 80, 100 mm (1.96", 3.15", 3.94")
    Extractive cell: 200, 400, 800, 1000mm, 10m
    Short descriptionExceptional ease of use and almost zero maintenance
    Effective path lengthProbes: 100, 200, 400 mm (3.94", 7.87", 15.75")
    Wafer Cell: 50, 80, 100 mm (1.96", 3.15", 3.94")
    Extractive cell: 200, 400, 800, 1000mm, 10m
    Lower Detection Limit1000 ppm-v
    Measurement range0–100%
    Accuracy2% of reading or 1000 ppm, whichever is greater
    LinearityBetter than 1%
    Resolution1000 ppm-v
    DriftNegligible (< 2% of measurement range between maintenance intervals)
    Sampling rate1 second
    Response time (T90)CO2 in N2 1% to O% in < 4 sec
    Repeatability± 0.25% of reading or 5000 ppm-v CO2 (whichever is greater)
    Process pressure range0.8 bar – 2 bar (abs)/ 11.6 psi – 29.psi (abs)
    Process temperature range0 – + 250 °C (+ 32 –+ 482 °F) Optional (for probe installation) 0 – + 600 °C (0 – +1112 °F) with additional thermal barrier,
    0 – + 150 °C (+ 32 –+ 302 °F) (White cell)
    Exceptional ease of use and almost zero maintenance
    Probes: 100, 200, 400 mm (3.94", 7.87", 15.75")
    Wafer Cell: 50, 80, 100 mm (1.96", 3.15", 3.94")


    Extractive cell: 200, 400, 800, 1000mm, 10m
    Short descriptionExceptional ease of use and almost zero maintenance
    Effective path lengthProbes: 100, 200, 400 mm (3.94", 7.87", 15.75")
    Wafer Cell: 50, 80, 100 mm (1.96", 3.15", 3.94")


    Extractive cell: 200, 400, 800, 1000mm, 10m
    Lower Detection Limit1000 ppm-v (CO2)
    1500 ppm-v (CO)
    Measurement range0–100%(CO2 and CO)
    Accuracy2% of reading or 1000 ppm, whichever is greater
    LinearityBetter than 1%
    Resolution1000 ppm-v
    DriftNegligible (< 2% of measurement range between maintenance intervals)
    Sampling rate1 second
    Response time (T90)CO2 in N2 1% to O% in < 4 sec
    Repeatability± 0.25% of reading or 5000 ppm-v CO2 or CO (whichever is greater)
    Process pressure range0.8 bar – 2 bar (abs)/ 11.6 psi – 29.psi (abs)
    Process temperature range0 – + 250 °C (+ 32 –+ 482 °F) Optional (for probe installation) 0 – + 600 °C (0 – +1112 °F) with additional thermal barrier,
    0 – + 150 °C (+ 32 –+ 302 °F) (White cell)
    Exceptional ease of use and almost zero maintenance
    Probes: 100, 200, 400 mm (3.94", 7.87", 15.75")
    Wafer Cell: 50, 80, 100 mm (1.96", 3.15", 3.94")

    Extractive cell: 200, 400, 800, 1000mm, 10m
    Short descriptionExceptional ease of use and almost zero maintenance
    Effective path lengthProbes: 100, 200, 400 mm (3.94", 7.87", 15.75")
    Wafer Cell: 50, 80, 100 mm (1.96", 3.15", 3.94")

    Extractive cell: 200, 400, 800, 1000mm, 10m
    Lower Detection Limit1500 ppm-v
    Measurement range0–100%
    Accuracy2% of reading or 1500 ppm, whichever is greater
    LinearityBetter than 1%
    Resolution1500 ppm-v
    DriftNegligible (< 2% of measurement range between maintenance intervals)
    Sampling rate1 second
    Response time (T90)CO in N2 300 ppm-v to 0% in < 4 sec
    Repeatability± 0.25% of reading or 0.75%-v CO (whichever is greater)
    Process pressure range0.8 bar – 1.5 bar (abs)/ 11.6 psi – 21.7.psi (abs)
    Process temperature range0 – + 250°C (+ 32 –+ 482 °F) Optional (for probe installation) 0 – + 600 °C (0 – +1112 °F) with additional thermal barrier,
    0 – + 150 °C (+ 32 –+ 302 °F) (White cell)
    Exceptional ease of use and almost zero maintenance
    Probes: 100, 200, 400 mm (3.94", 7.87", 15.75")
    Wafer cell: 50, 80, 100 mm (1.96", 3.15", 3.94")

    Extractive cell: 200, 400, 800, 1000mm, 10m
    Short descriptionExceptional ease of use and almost zero maintenance
    Effective path lengthProbes: 100, 200, 400 mm (3.94", 7.87", 15.75")
    Wafer cell: 50, 80, 100 mm (1.96", 3.15", 3.94")

    Extractive cell: 200, 400, 800, 1000mm, 10m
    Lower Detection Limit1 ppm-v
    Measurement range0-20,000 ppm (0-2%)
    Accuracy2% of reading or 1 ppm, whichever is greater
    LinearityBetter than 1%
    Resolution1 ppm-v
    DriftNegligible (<2% of measurement range between maintenance intervals)
    Sampling rate1 second
    Response time (T90)CO in N2 300 ppm-v to 0% in <4 sec
    Repeatability±0,25% of reading or 5 ppm-v CO (whichever is greater)
    Process pressure range0.8 bar - 2 bar (abs)/11.6 psi - 29. psi (abs)
    Process temperature range0-250 ºC(32-482 ºF)
    Optional(for probe instalation) 0-600 ºC (0-1112 ºF) with additional thermal barrier
    Exceptional ease of use and almost zero maintenance
    Probes: 100, 200 400 mm (3.94”, 7.87”, 15.75”)
    Wafer Cell: 50, 80, 100 mm (1.96”, 3.15”, 3.94”)
    Extractive cell: 200, 400, 800, 1000mm.
    Short descriptionExceptional ease of use and almost zero maintenance
    Effective path lengthProbes: 100, 200 400 mm (3.94”, 7.87”, 15.75”)
    Wafer Cell: 50, 80, 100 mm (1.96”, 3.15”, 3.94”)
    Extractive cell: 200, 400, 800, 1000mm.
    Lower Detection Limit0.6ppm-v
    Measurement range0-1%
    Accuracy2% of reading or 1000 ppm, whichever is greater
    LinearityBetter than 1%
    Resolution0.6 ppm-v
    DriftNegligible (< 2% of measurement range between maintenance intervals)
    Sampling rate1 second
    Response time (T90)HCl in N2 1% to O% in < 4 sec
    Repeatability± 0.25% of reading or 3 ppm-v HCl(whichever is greater)
    Process pressure range0.8 bar - 3 bar (abs)/ 11.6 psi - 43.5 psi (abs)
    Process temperature range0 – + 250 °C (+ 32 –+ 482 °F) Optional (for probe installation) 0 – + 600 °C (0 – +1112 °F) with additional thermal barrier,
    0 – + 150 °C (+ 32 –+ 302 °F) (White cell)
    Exceptional ease of use and almost zero maintenance
    Probes: 100, 200 400 mm (3.94”, 7.87”, 15.75”)
    Wafer Cell: 50, 80, 100 mm (1.96”, 3.15”, 3.94”)
    Extractive cell: 200, 400, 800, 1000mm.
    Short descriptionExceptional ease of use and almost zero maintenance
    Effective path lengthProbes: 100, 200 400 mm (3.94”, 7.87”, 15.75”)
    Wafer Cell: 50, 80, 100 mm (1.96”, 3.15”, 3.94”)
    Extractive cell: 200, 400, 800, 1000mm.
    Lower Detection Limit20 ppm-v
    Measurement range0-50%
    Accuracy2% of reading or 1000 ppm, whichever is greater
    LinearityBetter than 1%
    Resolution20 ppm-v
    DriftNegligible (< 2% of measurement range between maintenance intervals)
    Sampling rate1 second
    Response time (T90)H2S in N2 1% to O% in < 4 sec
    Repeatability± 0.25% of reading or 100 ppm-v H2S (whichever is greater)
    Process pressure range0.8 bar - 2 bar (abs)/ 11.6 psi - 29 psi (abs)
    Process temperature range0 – + 250 °C (+ 32 –+ 482 °F) Optional (for probe installation) 0 – + 600 °C (0 – +1112 °F) with additional thermal barrier,
    0 – + 150 °C (+ 32 –+ 302 °F) (White cell)
    Exceptional ease of use and almost zero maintenance
    Probes: 100, 200, 400 mm (3.94", 7.87", 15.75")
    Wafer cell: 50, 80, 100 mm (1.96", 3.15", 3.94")

    Extractive cell: 200, 400, 800, 1000mm, 10m
    Short descriptionExceptional ease of use and almost zero maintenance
    Effective path lengthProbes: 100, 200, 400 mm (3.94", 7.87", 15.75")
    Wafer cell: 50, 80, 100 mm (1.96", 3.15", 3.94")

    Extractive cell: 200, 400, 800, 1000mm, 10m
    Lower Detection Limit5 ppm-v
    Measurement range0-200,000 ppm (0-2%)
    Accuracy2% of reading or 10 ppm, whichever is greater
    LinearityBetter than 1%
    Resolution5 ppm-v
    DriftNegligible (<2% of measurement range between maintenance intervals)
    Sampling rate1 second
    Response time (T90)H2O in N2 1% to 0% in <4 sec
    Repeatability±0,25% of reading or 50 ppm-v O2 (whichever is greater)
    Process pressure range0.8 bar - 2 bar (abs)/11.6 psi - 29. psi (abs)
    Process temperature range0-250 ºC(32-482 ºF)
    Optional(for probe instalation) 0-600 ºC (0-1112 ºF) with additional thermal barrier
    Exceptional ease of use and almost zero maintenance
    Probes: 100, 200, 400 mm (3.94", 7.87", 15.75")
    Wafer cell: 50, 80, 100 mm (1.96", 3.15", 3.94")

    Extractive cell: 200, 400, 800, 1000mm, 10m
    Short descriptionExceptional ease of use and almost zero maintenance
    Effective path lengthProbes: 100, 200, 400 mm (3.94", 7.87", 15.75")
    Wafer cell: 50, 80, 100 mm (1.96", 3.15", 3.94")

    Extractive cell: 200, 400, 800, 1000mm, 10m
    Lower Detection Limit100 ppm-v
    Measurement range0-100%
    Accuracy2% of reading or 100 ppm O2, whichever is greater
    LinearityBetter than 1%
    Resolution<0…01% vol O2 (100 ppm-v)
    DriftNegligible (<2% of measurement range between maintenance intervals)
    Sampling rate1 second
    Response time (T90)O2 in N2 21% >0% in <2sec
    Repeatability±0,25% of reading or 0,05% O2 (whichever is greater)
    Process pressure range0.8 bar - 5 bar (abs)/11.6 psi - 72.52 psi (abs)
    Process temperature range0-250 ºC(32-482 ºF)
    Optional(for probe instalation) 0-600 ºC (0-1112 ºF) with additional thermal barrier
    Comparison
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